Datasheet Details
| Part number | K4S510432B-TCL75 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 149.53 KB |
| Description | 512Mb B-die SDRAM Specification |
| Datasheet | K4S510432B-TCL75_Samsungsemiconductor.pdf |
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Overview: SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (February, 2004) - Corrected typo. CMOS SDRAM Rev. 1.
| Part number | K4S510432B-TCL75 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 149.53 KB |
| Description | 512Mb B-die SDRAM Specification |
| Datasheet | K4S510432B-TCL75_Samsungsemiconductor.pdf |
|
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The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
| Part Number | Description |
|---|---|
| K4S510432B-TC | 512Mb B-die SDRAM Specification |
| K4S510432B-TC75 | 512Mb B-die SDRAM Specification |
| K4S510432M | 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510732B | Stacked 512Mbit SDRAM |
| K4S510832B-TC75 | 512Mb B-die SDRAM Specification |
| K4S510832B-TCL75 | 512Mb B-die SDRAM Specification |
| K4S510832M | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S511533F-YC | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511533F-YF | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511533F-YL | 8M x 16Bit x 4 Banks Mobile SDRAM |